bb 833 apr-30-1998 1 silicon tuning diode ? extended frequency range up to 2.5 ghz; special design for use in tv-sat indoor units ? high capacitance ratio vps05176 1 2 type marking pin configuration package bb 833 white x 1 = c 2 = a sod-323 maximum ratings parameter value symbol unit v v r 30 diode reverse voltage peak reverse voltage ( r 5k ? ) v rm 35 20 ma forward current i f operating temperature range -55 ... 150 t op c t st g -55 ... 150 storage temperature
bb 833 apr-30-1998 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit typ. max. min. dc characteristics na 20 reverse current v r = 30 v - i r - reverse current v r = 30 v, t a = 85 c - - i r 500 ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 28 v, f = 1 mhz c t 8.5 0.6 pf 10 0.9 9.3 0.75 capacitance ratio v r = 1 v, v r = 28 v, f = 1 mhz 12.4 - - c t1 / c t28 11 - 3 % - ? c t / c t capacitance matching v r = 1 v, v r = 28 v, f = 1 mhz series resistance v r = 1 v, f = 100 mhz r s - ? - 1.8 - nh series inductance l s - 1.8 1) in-line matching. for details please refer to application note 047
bb 833 apr-30-1998 3 diode capacitance c t = f ( v r ) f = 1mhz 10 0 ehd07121 bb 833 c v r t 01 10 2 10 v 2 4 6 8 10 pf 12 temperature coefficient of the diode capacitance t cc = f ( v r ) 10 -1 10 0 10 1 10 2 v v r -5 10 -4 10 -3 10 1/c t cc
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